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| SPICE MODELS: DMN100 Lead-free Green DMN100 N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features * * * * * * * Extremely Low On-Resistance: 170mW @ VGS = 4.5V High Drain Current: 1.1A Ideal for Notebook Computer, Portable Phone, PCMCIA Cards, and Battery Powered Circuits Lead Free By Design/RoHS Compliant (Note 2) Qualified to AEC-Q101 Standards for High Reliability ESD Protected Gate "Green" Device (Note 3) E G D G H D TOP VIEW S B C A SC-59 Dim A B C D E G H K J Drain Min 0.30 1.40 2.50 0.85 0.30 1.70 2.70 3/4 1.00 0.55 0.10 Max 0.50 1.80 3.00 1.05 0.70 2.10 3.10 0.10 1.40 0.70 0.35 Mechanical Data * * * * * * * * Case: SC-59 Case Material - Molded Plastic, "Green" Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020C Terminals: Finish Matte Tin annealed over Copper leadframe. Solderable per MIL-STD-202, Method 208 Terminal Connections: See Diagram Marking: See Last Page Ordering & Date Code Information: See Last Page Weight: 0.008 grams (approximate) Gate Protection Diode Source Gate M L J K L M All Dimensions in mm ESD protected EQUIVALENT CIRCUIT Maximum Ratings Drain-Source Voltage Gate-Source Voltage Drain Current Total Power Dissipation @ TA = 25C unless otherwise specified Symbol VDSS Continuous Continuous Pulsed VGSS ID Pd RqJA Tj, TSTG DMN100 30 20 1.1 4.0 500 250 -55 to +150 Units V V A mW K/W C Characteristic Thermal Resistance, Junction to Ambient Operating and Storage Temperature Range Notes: 1. Pulse width 300ms, duty cycle 2%. 2. No purposefully added lead. 3. Diodes Inc.'s "Green" Policy can be found on our website at http://www.diodes.com/products/lead_free/index.php. DS30049 Rev. 6 - 2 1 of 3 www.diodes.com DMN100 a Diodes Incorporated Electrical Characteristics Characteristic OFF CHARACTERISTICS (Note 1) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage ON CHARACTERISTICS (Note 1) Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transconductance DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Gate-to-Source Charge Gate-to-Drain Charge SWITCHING CHARACTERISTICS Turn-On Delay Time Turn-Off Delay Time Turn-On Rise Time Turn-Off Fall Time @ TA = 25C unless otherwise specified Symbol BVDSS @ Tj = 25C @ Tj = 125C IDSS IGSS VGS(th) RDS (ON) gFS Ciss Coss Crss Qg Qgs Qgd tD(ON) tD(OFF) tr tf IS ISM VSD trr Min 30 3/4 3/4 1.0 3/4 1.3 3/4 3/4 3/4 3/4 3/4 3/4 3/4 3/4 3/4 3/4 3/4 3/4 3/4 3/4 Typ 3/4 3/4 3/4 3/4 3/4 2.4 150 90 30 5.5 0.8 1.3 10 25 15 45 3/4 3/4 3/4 35 Max 3/4 1.0 10 100 3.0 0.170 0.240 3/4 3/4 3/4 3/4 3/4 3/4 3/4 3/4 3/4 3/4 3/4 0.54 4.0 1.2 3/4 Unit V A nA V W S pF pF pF nC nC nC ns ns ns ns A A V ns 3/4 3/4 IF = 1.0A, VGS = 0V IF = 1.0A, di/dt = 50A/ms VDD = 10V, ID = 0.5A, VGS = 5.0V, RGEN = 50W VDS = 24V, ID = 1.0A, VGS = 10V VDS = 10V, VGS = 0V f = 1.0MHz Test Condition VGS = 0V, ID = 250mA VDS = 24V, VGS = 0V VGS = 12V, VDS = 0V VDS = 10V, ID =1.0mA VGS = 4.5V, ID = 0.5A VGS = 10V, ID = 1.0A VDS = 10V, ID =0.5A SOURCE- DRAIN RATINGS (BODY DIODE) Continuous Source Current Pulse Source Current Forward Voltage Reverse Recovery Time Notes: 1. Pulse width 300ms, duty cycle 2%. 4.0 3.5 3.0 2.5 1.0 VGS = 10V 5.0V 4.5V 4.0V 3.5V RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE ID, DRAIN CURRENT (A) VGS = 4.5V 3.0V 2.0 1.5 1.0 2.5V 0.5 0.1 VGS = 10V 0 0 1 2 3 4 5 VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 1 On-Region Characteristics 0.01 0 1 2 3 4 ID, DRAIN CURRENT (A) Fig. 2 On-Resistance vs Drain Current DS30049 Rev. 6 - 2 2 of 3 www.diodes.com DMN100 0.30 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0 0 50 100 150 VGS = 10V TA = 25 C 0.25 0.20 VGS = 4.5V, RDS @ 0.5A 0.15 0.10 VGS = 10V, RDS @ 1.0A 0.05 0 -50 RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 0 1 2 3 4 5 Tj, JUNCTION TEMPERATURE ( C) Fig. 3 On-Resistance vs Junction Temperature VGS, GATE TO SOURCE VOLTAGE (V) Fig. 4 On-Resistance vs Gate-Source Voltage Ordering Information Device DMN100-7-F Notes: (Note 4) Packaging SC-59 Shipping 3000/Tape & Reel 4. For Packaging Details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf. Marking Information M11 Date Code Key Year Code Month Code Jan 1 Feb 2 2006 T Mar 3 Apr 4 May 5 2007 U Jun 6 Jul 7 2008 V Aug 8 Sep 9 Oct O 2009 W Nov N Dec D Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to any product herein. Diodes Incorporated does not assume any liability arising out of the application or use of any product described herein; neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on our website, harmless against all damages. LIFE SUPPORT Diodes Incorporated products are not authorized for use as critical components in life support devices or systems without the expressed written approval of the President of Diodes Incorporated. DS30049 Rev. 6 - 2 YM M11 = Product Type Marking Code YM = Date Code Marking Y = Year ex: T = 2006 M = Month ex: 9 = September IMPORTANT NOTICE 3 of 3 www.diodes.com DMN100 |
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